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 SEMiX 653GB176HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R) 3s Trench IGBT Modules
SEMiX 653GB176HDs SEMiX 653GAL176HDs SEMiX 653GAR176HDs Preliminary Data Module Inverse Diode
Features
Characteristics Symbol Conditions IGBT min. typ. max. Units
Typical Applications
Remarks
GB
GAL
GAR
1
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 653GB176HDs
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMiX(R) 3s Trench IGBT Modules
Module SEMiX 653GB176HDs SEMiX 653GAL176HDs SEMiX 653GAR176HDs Preliminary Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Remarks
GB
GAL
GAR
2
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 653GB176HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 653GB176HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 653GB176HDs
5
20-04-2007 SCH
(c) by SEMIKRON


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